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Noise coupling through the substrate or silicon interposer among adjacent TSVs has a significant impact on the signal integrity of the TSVs. Since resistance and capacitance are dependent on temperature, more accurate electrical models for TSVs should incorporate the temperature dependency of the material. This paper presents high-frequency temperature-dependent RLGC models for two neighboring TSVs...
Driven by the abrupt miniaturization of mobile devices and demand for 3D-IC, Through Silicon Via (TSV) has been highlighted as the key technology for compactly integrating multiple dies of various functions as a whole system. However, due to the instability in the TSV fabrication process, various types of disconnection defects can be resulted during fabrication steps, resulting in a severe decrease...
Motivated by the abrupt miniaturization of mobile devices and demand for 3D-IC, Through Silicon Via (TSV) has been highlighted as the key technology for compactly integrating multiple dies of various functions as a whole system. With dramatic growth in the number of TSVs in TSV-based 3D-IC, a need for accurate detection of TSV disconnection defects arose, to compensate for the instability in the TSV...
As a solution to limitlessly growing demand on miniaturization of electronic devices, through silicon via (TSV) based 3-dimensional integrated circuits (3D-IC) have brought another era of technology evolution. However, one of the remaining challenges to overcome is to increase the reliability of the products. Due to the instability of TSV fabrication process, different types of failure may be caused,...
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